1 MRF9822T1 motorola rf device data
the rf small signal line
pseudomorphic high electron mobility transistor designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and pc rf modems. ? performance specifications at 3.5 v, 850 mhz: output power = 31 dbm min power gain = 11 db typ efficiency = 70% min ? guaranteed ruggedness at load vswr = 20:1 ? new plastic surface mount package ? available in tape and reel packaging options: t1 suffix = 1,000 units per reel ? device marking = 9822 maximum ratings rating symbol value unit draingate voltage v dgo 12 vdc gatesource voltage v gs 6 vdc drain current continuous i d 3 adc total device dissipation @ t c = 50 c derate above 50 c p d 10 100 w mw/ c storage temperature range t stg 65 to +150 c operating temperature range t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 10 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draingate breakdown voltage (i d = 1.5 ma) bv gdo 12 vdc offstate leakage current (v ds = 5.5 v, v gs = 2. 6 v) i ds(off) 3 ma gatesource leakage current (v gs = 2. 6 v) i gss 10 m adc note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9822T1/d
semiconductor technical data 31 dbm, 850 mhz high frequency power transistor gaas phemt case 44902, style 1 (pld1) ? motorola, inc. 1997
MRF9822T1 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 3.5 v, i d = 150 ma) v gs(th) 1.5 0.5 vdc forward transconductance (v ds = 6 v, i d = 200 ma) g fs 1.5 mhos saturation draincurrent (v gs = 0.0 v, v ds = 1.5 v) i dss 1.8 2.5 a functional characteristics power gain (v dd = 3.5 vdc, p in = 20 dbm, i dq = 150 ma, f = 850 mhz) g ps 10.5 11 db drain efficiency (v dd = 3.5 vdc, p in = 20 dbm, i dq = 150 ma, f = 850 mhz) h d 65 70 % figure 1. 850 mhz test fixture schematic v gate input output 0.75 x 0.65 ceramic substrate c6 l1 c7 c8 c9 c10 c11 c12 l3 l4 l2 r1 c1 c2 c3 z1 z2 z3 dut z4 z5 z6 c4 c5 c13 c1, c13 1000 pf, atc abo series c2 2.7 pf, atc abo series c3 2.7 pf, atc abo series c4 7.5 pf, atc abo series c5 33 pf, atc abo series c6, c12 47 m f, ceramic c7, c8, c9, c10, c11 0.05 m f chip l1, l4 vk200 4 turn ferrite bead l2 7 turns, awg #18, 0.09 i.d., close wound l3 3 ferrite beads on 1/2 awg #16 r1 680 w , 1/8 watt leaded z1 0.075 x 0.790 microstrip z2 0.075 x 0.09 microstrip z3, z4 0.075 x 0.25 microstrip z5 0.075 x 0.09 microstrip z6 0.075 x 0.53 microstrip substrate material: 0.05, teflon/glass, e r = 2.55, 2 oz. cu. table 1. large signal impedance v dd = 3.5 v, p in = 20 dbm, i dq = 150 ma f mhz z in ohms z ol * ohms 850 5.0 j6.3 5.5 j1.2 z ol * is the conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
3 MRF9822T1 motorola rf device data package dimensions case 44902 issue a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. draft a style 1: pin 1. drain 2. gate 3. source 4. source l s k b r q 4 1 3 2 n m 4 pl f 2 pl zone v p c e w 8 pl zone u resin bleed/flash allowable d 2 pl j 8 pl g h t y x z aa dim min max min max millimeters inches a 0.185 0.195 4.70 4.95 b 0.175 0.185 4.44 4.70 c 0.058 0.064 1.47 1.63 d 0.017 0.023 0.43 0.58 e 0.014 0.017 0.36 0.43 f 0.027 0.033 0.69 0.84 g 0.071 0.077 1.80 1.96 h 0.017 0.023 0.43 0.58 j 0.000 0.007 0.00 0.18 k 0.018 0.026 0.46 0.66 l 0.253 0.263 6.43 6.68 m 5 ref 5 ref n 1.75 ref 4.44 ref p 0.000 0.006 0.00 0.15 q 0.120 0.130 3.05 3.30 r 0.220 0.230 5.59 5.84 s 0.030 0.038 0.76 0.97 t 0.050 0.060 1.27 1.52 u 0.000 0.018 0.00 0.46 v 0.000 0.014 0.00 0.36 w 0.004 0.016 0.10 0.41 x 0.131 0.141 3.33 3.58 y 0.065 0.075 1.65 1.90 z 0.089 0.099 2.26 2.51 aa 0.056 0.066 1.42 1.67
MRF9822T1 4 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://www.mot.com/sps/ 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 mrf9822/d ?
|
